Analysis of Heat Transfer in a Chemical Vapor Deposition Reactor : An Eigenfunction Expansion
نویسندگان
چکیده
A numerical solution procedure combining several weighted residual methods and based on global trial function expansion is developed to solve a model for the steady state gas ow eld and temperature distribution in a low-pressure chemical vapor deposition reactor. The enthalpy ux across wafer/gas boundary is calculated explicitly and is found to vary signi cantly as a function of wafer position. An average heat transfer coe cient is estimated numerically and is compared to typical radiative heat transfer rates in these system. The convergence properties of the discretization method developed are also discussed.
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